Researchers at the Korean KAIST developed a technique for the delamination of single-layer graphene from a metal etching, that enables different types of transfer methods such as transfer onto a surface of a device or a curved surface, and large surface transfer onto 4 inch wafers. This method could be helpful for wearable smart gadgets and various graphene electronic devices.
While the traditional method of wet transfer might harm or contaminate the graphene in the process, this technique grants safer transfer as well as significant freedom in the transfer process. After a graphene growth substrate formed on a catalytic metal substrate is treated in an aqueous PVA solution, a PVA film is formed and a strong adhesion force is formed between the substrate and the graphene layers. The graphene is delaminated from the growth substrate by means of an elastomeric stamp while the graphene layer is in an isolated state and thus can be freely transferred onto a circuit board.