Japan's AIST and NIMS developed a new low-power graphene transistor

Researchers from Japan's AIST and NIMS institues developed a new low power graphene transistor design and produced a working prototype. The new transistor is based on a new operation principle, where two electrodes and two top gates were arranged on the graphene, and crystal defects were introduced by irradiating a helium ion beam on the graphene between the top gates.

In this transistor charge movement can be controlled efficiently by applying an independent voltage to the two top gates. Transistor polarity can be reversed by electrical control. That's the first transistor that can do this.

The researchers say that existing silicon IC manufacturing technology can be easily adapted to make the new transistors. AIST are producing graphene prototypes using their Aixtron BM 300 system.

Posted: Jan 22,2013 by Ron Mertens